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INFINEON  BSC067N06LS3GATMA1  MOSFET Transistor, N Channel, 50 A, 60 V, 0.0054 ohm, 10 V, 1.7 V

INFINEON BSC067N06LS3GATMA1
Technical Data Sheet (456.08KB) EN 모든 기술 문서 보기

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제품 개요

The BSC067N06LS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • Saving space
  • Very low voltage overshoot
  • Superior thermal resistance

제품 정보

Transistor Polarity:
N Channel
Continuous Drain Current Id:
50A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.0054ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.7V
Power Dissipation Pd:
69W
Transistor Case Style:
SuperSOT
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)

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애플리케이션

  • Power Management;
  • Alternative Energy;
  • Motor Drive & Control;
  • Industrial

법률 및 환경

MSL:
MSL 3 - 168 hours
원산지:
Malaysia

최종후의 중요 제조 공정이 이루어진 국가

RoHS 준수:
관세 번호:
85412900
무게(kg):
.0002

대체품

유사 제품