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INFINEON  BSZ123N08NS3GATMA1  MOSFET Transistor, N Channel, 40 A, 80 V, 10.3 mohm, 10 V, 2.8 V

INFINEON BSZ123N08NS3GATMA1
Technical Data Sheet (478.53KB) EN 모든 기술 문서 보기

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제품 개요

The BSZ123N08NS3 G is a 80V N-channel Power MOSFET that offers highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
  • Dual sided cooling
  • Low parasitic inductance
  • Low profile (<0.7mm)
  • Reduced switching and conduction losses
  • Superior thermal resistance

제품 정보

Transistor Polarity:
N Channel
Continuous Drain Current Id:
40A
Drain Source Voltage Vds:
80V
On Resistance Rds(on):
0.0103ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.8V
Power Dissipation Pd:
66W
Transistor Case Style:
PG-TSDSON
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

유사 제품 찾기  공통 특성별 분류

애플리케이션

  • Alternative Energy;
  • Consumer Electronics;
  • Communications & Networking;
  • Computers & Computer Peripherals;
  • Power Management;
  • LED Lighting;
  • Motor Drive & Control

법률 및 환경

MSL:
MSL 1 - Unlimited
원산지:
Malaysia

최종후의 중요 제조 공정이 이루어진 국가

RoHS 준수:
관세 번호:
85412900
무게(kg):
.00014

유사 제품