Low

M45PE20-VMN6P - 

Flash Memory, Low Voltage, Page Erasable, Byte Alterability, 2 Mbit, 256K x 8bit, 75 MHz

MICRON M45PE20-VMN6P

이미지는 참고용으로만 제공됩니다. 자세한 내용은 제품 설명을 참조하세요.

제조업체:
MICRON MICRON
제조업체 부품 번호:
M45PE20-VMN6P
주문 참조 번호:
1099704
기술 데이터 시트:
(EN)
모든 기술 문서 보기

제품 정보

:
-40°C
:
85°C
:
-
:
75MHz
:
8Pins
:
256K x 8bit
:
2Mbit
:
3V Serial NOR Flash Memories
:
SOIC
:
2.7V
:
Serial, SPI
:
Each
:
3.6V
:
MSL 3 - 168 hours
유사 제품 찾기 위에서 특징을 선택하고 수정하여 비슷한 제품을 찾을 수 있습니다.

제품 개요

The M45PE20-VMN6P is a 2MB low voltage page-erasable serial Flash Memory with byte-alterability and a 33MHz SPI bus interface. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page erase cycle followed by a page program cycle. The memory is organized as 4 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 1024 pages or 262144 bytes. The memory can be erased a page at a time, using the page erase instruction or a sector at a time, using the sector erase instruction.
  • Page write in 11ms typical
  • Page program in 1.2ms typical
  • Page erase in 10ms typical
  • 33MHz Clock rate maximum
  • Deep power-down mode 1µA typical
  • Electronic signature - JEDEC standard 2-byte signature
  • More than 100000 write cycles
  • More than 20 years data retention

애플리케이션

Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics

관련 제품