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MICRON  M45PE20-VMN6P  Flash Memory, Low Voltage, Page Erasable, Byte Alterability, 2 Mbit, 256K x 8bit, 75 MHz

MICRON M45PE20-VMN6P
Technical Data Sheet (525.82KB) EN 모든 기술 문서 보기

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제품 개요

The M45PE20-VMN6P is a 2MB low voltage page-erasable serial Flash Memory with byte-alterability and a 33MHz SPI bus interface. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page erase cycle followed by a page program cycle. The memory is organized as 4 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 1024 pages or 262144 bytes. The memory can be erased a page at a time, using the page erase instruction or a sector at a time, using the sector erase instruction.
  • Page write in 11ms typical
  • Page program in 1.2ms typical
  • Page erase in 10ms typical
  • 33MHz Clock rate maximum
  • Deep power-down mode 1µA typical
  • Electronic signature - JEDEC standard 2-byte signature
  • More than 100000 write cycles
  • More than 20 years data retention

제품 정보

Memory Size:
2Mbit
Flash Memory Configuration:
256K x 8bit
Clock Frequency:
75MHz
IC Interface Type:
Serial, SPI
Memory Case Style:
SOIC
No. of Pins:
8Pins
Access Time:
-
Supply Voltage Min:
2.7V
Supply Voltage Max:
3.6V
Operating Temperature Min:
-40°C
Operating Temperature Max:
85°C
Packaging:
Each
Product Range:
3V Serial NOR Flash Memories
MSL:
MSL 3 - 168 hours
SVHC:
No SVHC (17-Dec-2015)

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애플리케이션

  • Computers & Computer Peripherals;
  • Industrial;
  • Communications & Networking;
  • Consumer Electronics

법률 및 환경

MSL:
MSL 3 - 168 hours
원산지:
Italy

최종후의 중요 제조 공정이 이루어진 국가

RoHS 준수:
관세 번호:
85423261
무게(kg):
.002

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