BSN20-7

BSN20-7 is a N-channel enhancement mode field MOSFET. This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include backlighting, DC-DC converters, power management functions.

• Low on-resistance, low input capacitance
• Fast switching speed, low input/output leakage
• Drain-source voltage is 50V at TA=+25°C
• Gate-source voltage is ±20V at TA=+25°C
• Continuous drain current is 500mA at TA=+25°C, steady state, TSP=+25°C
• Pulsed drain current at TSP=+25°C, TA=+25°C is 1.2A
• Power dissipation at TA=+25°C is 600mW
• Static drain-source on-resistance is 1.3ohm typ at VGS=10V, ID=0.22A, TA=+25°C
• SOT23 case
• Operating and storage temperature range from -55 to +150°C