ADRF5130BCPZ

ADRF5130 is a high power, reflective, 0.7GHz to 3.8GHz, silicon, single-pole, double-throw (SPDT) switch. This switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. It has high power handling of 43dBm (maximum) and 0.1dB compression (P0.1dB) of 46dBm, with a low insertion loss of 0.6dB at 2GHz and 0.7dB at 3.5GHz. On-chip circuitry operates at a single, positive supply voltage of 5V and typical supply current of 1.06mA, making the device an ideal alternative to pin diode-based switches. It is used in application such as cellular/4G infrastructure, wireless infrastructure, military and high reliability applications, test equipment, pin diode replacement etc.

• Reflective, 50 ohm design
• Insertion loss is 0.6dB typical at (0.7GHz to 2GHz, TA = 25°C)
• High isolation is 50dB typical at (0.7GHz to 2GHz, TA = 25°C)
• RF input power, continuous wave (CW) at TCASE = 85°C
• RF input power, 1 continuous wave is 46.5dBm
• Input third-order intercept is 68dBm typ at (0.7GHz to 2GHz, TA = 25°C)
• Human body model (HBM): 2KV, class 2, charged device model (CDM): 1.25KV
• Positive control, TTL-compatible: VCTL = 0V or VDD
• Operating temperature is -40°C to +105°C
• Package style is 24-lead lead frame chip scale [LFCSP]

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