ADRF5160BCPZ

ADRF5160 is a silicon-based, high power, 0.7GHz to 4GHz, silicon, single-pole, double-throw (SPDT) reflective switch. This switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. On-chip circuitry operates at a single positive supply voltage of 5V at a typical supply current of 1.1mA, making the device an ideal alternative to pin diode-based switches. It is used in application such as wireless infrastructure, military and high reliability applications, test equipment, pin diode replacement etc.

• Reflective, 50 ohm design, high power handling at TCASE = 105°C
• CW power is 43dBm max at (VDD = 5V, VCTL = 0V/VDD, TA = 25°C)
• Peak power is 49dBm max at (VDD = 5V, VCTL = 0V/VDD, TA = 25°C)
• LTE average power (8dB PAR) is 41dBm max at (VDD = 5V, VCTL = 0V/VDD, TA = 25°C)
• P0.1dB is 47dBm typical at (VDD = 5V, VCTL = 0V/VDD, TA = 25°C)
• IP3 is 70dBm typical at (VDD = 5V, VCTL = 0V/VDD, TA = 25°C)
• ESD rating is HBM: 4KV, class 3A, CDM: 1.25KV
• Positive control, CMOS/TTL compatible
• Operating temperature is -40°C to +105°C
• Package style is 32-lead lead frame chip scale [LFCSP]

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