HMC1132PM5E

HMC1132PM5E is a four-stage, gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) power amplifier. The HMC1132PM5E exhibits excellent linearity with high output third-order intercept (IP3) of 37dBm, and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make the HMC1132PM5E an ideal candidate for last stage signal amplification before the antenna. Application includes point to point radios, point to multipoint radios, very small aperture terminals (VSATs) and satellite communication (SATCOM), military and space.

• Saturated output power is 29.5dBm (typ, TA = 25°C, VDD1 = VDD2 = 5V)
• Output third order intercept is 37dBm (typ, measurement taken at 5V, 650mA)
• High gain is 24dB (typical) at 29GHz to 32GHz
• Frequency range from 27 to 29GHz (TA = 25°C, VDD1 = VDD2 = 5V)
• Gain is 22dB (typ, TA = 25°C, VDD1 = VDD2 = 5V)
• Return loss is 7dB (typ, TA = 25°C, VDD1 = VDD2 = 5V)
• Output power for 1dB compression is 28.5dBm (typ, TA = 25°C, VDD1 = VDD2 = 5V)
• Saturated output power is 29.5dBm (typ, TA = 25°C, VDD1 = VDD2 = 5V)
• Noise figure is 7dB (typ, TA = 25°C, VDD1 = VDD2 = 5V)
• 32 lead LFCSP package, operating temperature range from -55°C to +85°C

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