HMC415LP3ETR

HMC415LP3ETR is a high-efficiency GaAs InGaP heterojunction bipolar transistor (HBT) MMIC power amplifier that operates between 4.9 and 5.9GHz. This amplifier is packaged in a low-cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20dB of gain, +26dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full-power down or RF output power/current control. For +15dBm OFDM output power (64 QAM, 54Mbps), the HMC415LP3E achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements. Applications include 802.11a WLAN, hiperLAN WLAN, access points, UNII & ISM radios.

• Power down capability, low external part count
• Gain is 20dB typical at TA = +25°C, 4.9 - 5.1GHz frequency range
• Gain variation over temperature is 0.04dB/°C typical at (TA = +25°C, 4.9 - 5.1GHz frequency range)
• Input return loss is 10dB typical at (TA = +25°C,4.9 - 5.1GHz frequency range)
• Output third order intercept (IP3) is 31dBm typical at (TA = +25°C, 4.9 - 5.1GHz frequency range)
• Noise figure is 6dB typical at (TA = +25°C, 4.9 - 5.1GHz frequency range)
• Supply current is 0.002mA/285mA typical at (Vpd = 0V/3V, TA = +25°C, 4.9 - 5.1GHz frequency range)
• Switching speed is 45ns typical at (TA = +25°C, 4.9 - 5.1GHz frequency range)
• Operating temperature range from -40°C to +85°C, 32-lead SMT package

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