제품 정보
제품 개요
HMC435AMS8GE is a non-reflective DC to 4GHz GaAs MESFET SPDT switch. This switch is ideal for cellular/3G and WiMAX/4G applications yielding upto 60dB isolation, low 0.8dB insertion loss and +50dBm input IP3. Power handling is excellent up through the 3.8GHz WiMAX band with the switch offering a P1dB compression of +30dBm. On-chip circuitry allows positive voltage control of 0V/+5Volts at very low DC currents. It is widely used in applications such as base stations & repeaters, infrastructure and access points, CATV/CMTS, test instrumentation etc.
- Insertion loss is 0.8dB typical at (DC - 2.5GHz, TA = +25°C, Vctl = 0/+5Vdc)
- Isolation (RFC to RF1/RF2) is 62dB typical at (DC - 1GHz, TA = +25°C, Vctl = 0/+5Vdc)
- Input power for 1dB compression is 30dBm typical at (0.5GHz to 4GHz, TA = +25°C, Vctl = 0/+5Vdc)
- Input third order intercept is 54dBm typical at (0.5GHz to 1GHz, TA = +25°C, Vctl = 0/+5Vdc)
- Switching speed is 40ns typical at (DC - 4GHz, TA = +25°C, Vctl = 0/+5Vdc)
- Operating temperature is -40°C to +85°C
- Package style is ultra small MSOP-86
메모
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
기술 사양
0Hz
MSOP-EP
-
-40°C
-
MSL 3 - 168 hours
4GHz
8Pins
-
85°C
-
No SVHC (21-Jan-2025)
기술 문서 (1)
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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