DMN24H3D5L-7

DMN24H3D5L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include DC-DC converters, power management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.

• Low gate threshold voltage, low input capacitance
• Fast switching speed, small surface mount package
• Drain-source voltage is 240V at TA = +25°C
• Gate-source voltage is ±20V at TA = +25°C
• Continuous drain current is 0.48A at TA = +25°C, VGS = 10V, steady state
• Pulsed drain current (10µs pulse, duty cycle = 1%) is 1.9A at TA = +25°C
• Total power dissipation is 0.76W at TA = +25°C
• Maximum body diode continuous current is 1.5A at TA = +25°C
• SOT23 case
• Operating and storage temperature range from -55 to +150°C

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