DMN3731U-7

DMN3731U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Typical applications include load switch, portable applications, power management functions.

• Low VGS(TH), can be driven directly from a battery
• Low RDS(ON), ESD protected gate
• Drain-source voltage is 30V at TA = +25°C
• Gate-source voltage is ±8V at TA = +25°C
• Continuous drain current is 0.9A at TA = +25°C, VGS = 4.5V, steady state
• Pulsed drain current (10µs pulse, duty cycle = 1%) is 3A at TA = +25°C
• Total power dissipation is 0.4W at TA = +25°C
• Maximum continuous body diode forward current is 0.55A at TA = +25°C
• SOT23 case
• Operating and storage temperature range from -55 to +150°C