DMN6140L-13

DMN6140L-13 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include DC-DC converters, power management functions, and analogue switch.

• Low on-resistance, low input capacitance
• Fast switching speed, low input/output leakage
• Drain-source voltage is 60V at TA = +25°C
• Gate-source voltage is ±20V at TA = +25°C
• Continuous drain current is 1.6A at TA = +25°C, VGS = 10V, steady state
• Pulsed drain current (10µs pulse, duty cycle = 1%) is 10A at TA = +25°C
• Total power dissipation is 0.7W at TA = +25°C
• Maximum continuous body diode forward current is 1.5A at TA = +25°C
• SOT23 case
• Operating and storage temperature range from -55 to +150°C