ZXM61N03F

ZXM61N03F is a N-channel enhancement mode MOSFET. It utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage, power management applications. Typical applications include DC - DC converters, power management functions, disconnect switches and motor control.

• Low on-resistance, fast switching speed
• Low gate drive, low threshold
• Drain-source voltage is 30V
• Gate-source voltage is ±20V
• Continuous drain current is 1.4A at TA=+25°C, VGS=10V
• Drain-source breakdown voltage is 30V min at ID=-250µA, VGS=0V, TA = 25°C
• Gate-source threshold voltage is 1V min at ID=-250µA, VDS= VGS, TA = 25°C
• Static drain-source on-state resistance is 0.22ohm max at VGS=10V, ID=0.91A, TA = 25°C
• SOT23 package
• Operating and storage temperature range from -55 to +150°C