CY7C1041GE30-10ZSXI

CY7C1041GE30-10ZSXI is a high-performance CMOS fast static RAM device with embedded ECC. This offers in single chip-enable option and in multiple pin configurations. The CY7C1041GE device includes an ERR pin that signals an error-detection and correction event during a read cycle. Data writes are performed by asserting the chip enable active-low (CE) and write enable active-low (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The byte high enable active-low (BHE) and byte low enable active-low (BLE) inputs control write operations to the upper and lower bytes of the specified memory location. Active-low BHE controls I/O8 through I/O15 and active-low BLE controls I/O0 through I/O7.

• High speed tAA = 10ns, 2.2V–3.6V voltage range, 4Mbit density
• 44-pin TSOP II, process technology = 65nm, data width: 1 = × 16-bits
• ERR output single bit error indication
• Active current: ICC = 38mA typical, standby current: ISB2 = 6mA typical
• 1.0-V data retention, TTL-compatible inputs and outputs
• Error indication (ERR) pin to indicate 1-bit error detection and correction
• Industrial operating temperature rating range from –40°C to +85°C