입고 시 알림 요청
수량 | 가격 |
---|---|
1+ | ₩4,835 |
10+ | ₩3,659 |
25+ | ₩3,215 |
50+ | ₩3,193 |
100+ | ₩3,171 |
250+ | ₩3,148 |
500+ | ₩3,126 |
1000+ | ₩3,103 |
제품 정보
제품 개요
The IR2112SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
애플리케이션
Industrial, Consumer Electronics, Alternative Energy, Power Management
기술 사양
2Channels
High Side and Low Side
16Pins
Surface Mount
250mA
10V
-40°C
125ns
-
MSL 3 - 168 hours
-
IGBT, MOSFET
SOIC
Non-Inverting
500mA
20V
125°C
105ns
-
No SVHC (21-Jan-2025)
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RoHS
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