페이지 인쇄
IRF7341GTRPBF
Dual MOSFET, N Channel, 55 V, 55 V, 5.1 A, 5.1 A, 0.043 ohm
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제조업체INFINEON
제조업체 부품 번호IRF7341GTRPBF
주문 코드2839483RL
Product RangeHEXFET Series
AKAIRF7341GTRPBF, SP001563394
기술 데이터 시트
제품 정보
제조업체INFINEON
제조업체 부품 번호IRF7341GTRPBF
주문 코드2839483RL
Product RangeHEXFET Series
AKAIRF7341GTRPBF, SP001563394
기술 데이터 시트
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds55V
Drain Source Voltage Vds N Channel55V
Continuous Drain Current Id5.1A
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id N Channel5.1A
On Resistance Rds(on)0.043ohm
Continuous Drain Current Id P Channel5.1A
Drain Source On State Resistance N Channel0.043ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.043ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd1.7W
Power Dissipation N Channel1.7W
Power Dissipation P Channel1.7W
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (21-Jan-2025)
제품 개요
HEXFET® power MOSFET utilize the latest processing techniques to achieve extremely low on-resistance per silicon area.
- Advanced process technology
- Dual N-channel MOSFET
- Ultra-low on-resistance
- 175°C operating temperature
- Repetitive avalanche allowed up to Tjmax
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
N Channel
Drain Source Voltage Vds
55V
Continuous Drain Current Id
5.1A
Continuous Drain Current Id N Channel
5.1A
Continuous Drain Current Id P Channel
5.1A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
1.7W
Power Dissipation P Channel
1.7W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
55V
Drain Source Voltage Vds P Channel
55V
On Resistance Rds(on)
0.043ohm
Drain Source On State Resistance N Channel
0.043ohm
Drain Source On State Resistance P Channel
0.043ohm
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Power Dissipation N Channel
1.7W
Operating Temperature Max
175°C
Qualification
-
MSL
-
기술 문서 (1)
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (21-Jan-2025)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.00027