제품 정보
제품 개요
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
애플리케이션
Industrial, Power Management
기술 사양
P Channel
55V
55V
3.4A
3.4A
0.095ohm
0.095ohm
1V
2W
2W
-
-
No SVHC (21-Jan-2025)
P Channel
55V
3.4A
0.095ohm
Surface Mount
10V
SOIC
8Pins
2W
150°C
-
-
IRF7342TRPBF의 대체 제품
1개 제품을 찾았습니다.
관련 제품
4개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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