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수량 | 가격 |
---|---|
1+ | ₩4,023 |
25+ | ₩3,718 |
100+ | ₩3,644 |
제품 정보
제품 개요
The SST39SF040-70-4I-NHE is a 4MB CMOS multi-purpose Flash Memory manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes with a 4.5 to 5.5V power supply. Featuring high performance byte-program, the device provides a maximum byte-program time of 20µsec. This device uses toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years.
- Superior reliability
- Low power consumption
- Sector-erase capability - uniform 4Kbyte word sectors
- Fast read access time - 70ns
- Latched address and data
- Automatic write timing - internal VPP generation
- Fast erase and byte-program
- End-of-write detection
- TTL I/O compatibility
애플리케이션
Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Parallel NOR
512K x 8bit
LCC
-
4.5V
5V
-40°C
5V Parallel NOR Flash Memories
No SVHC (21-Jan-2025)
4Mbit
Parallel
32Pins
70ns
5.5V
Surface Mount
85°C
MSL 3 - 168 hours
SST39SF040-70-4I-NHE의 대체 제품
2개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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