MT53E2G64D8TN-046 WT:C

MT53E2G64D8TN-046 WT:C is a 16Gb mobile low-powerDDR4 SDRAM with low VDDQ. It is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks. It has selectable output drive strength (DS), clock-stop capability. It has programmable VSS (ODT) termination, single-ended CK and DQS support.

• Operating voltage is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
• 2Gig x 64 configuration, LPDDR4, 8 die addressing, C design
• Packaging style is 556-ball LFBGA 12.4 x 12.4 x 1.23mm (Ø0.24 SMD)
• Cycle time is 046 = 468ps, ᵗCK RL = 36/40, clock rate is 2133MHz
• Operating temperature range is –25°C to +85°C, data rate per pin is 4266Mb/s
• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), Upto 8.5 GB/s per die x16 channel
• Programmable and on-the-fly burst lengths (BL = 16,32), partial-array self refresh (PASR)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling