MT53E512M64D2HJ-046 WT:B

MT53E512M64D2HJ-046 WT:B is a LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.

• Frequency range: 2133–10MHz (data rate range per pin: 4266–20Mb/s)
• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL)
• Programmable and on-the-fly burst lengths (BL =16, 32)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
• 512 Meg x 64 configuration, 4GB (32Gb) total density, 4266Mb/s data rate per pin
• 556-ball TFBGA package
• Operating temperature range from –25°C to +85°C