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제품 정보
제조업체NXP
제조업체 부품 번호BFU590GX
주문 코드2776268
기술 데이터 시트
Transistor PolarityNPN
Collector Emitter Voltage Max12V
Transition Frequency8.5GHz
Power Dissipation2W
Continuous Collector Current200mA
Transistor Case StyleSOT-223
No. of Pins4Pins
DC Current Gain hFE Min60hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
BFU590GX is a NPN wideband silicon RF transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2GHz. Typical applications include automotive applications, broadband amplifiers, medium power amplifiers (500mW at a frequency of 433MHz or 866MHz) and large signal amplifiers for ISM applications.
- 24V collector-base voltage, 12V collector-emitter voltage, 2V emitter-base voltage
- Medium power, high linearity, high breakdown voltage RF transistor
- 95 typical DC gain
- Maximum stable gain is 13dB at 900MHz
- AEC-Q101 qualified
- Output power at 1dB gain compression PL(1dB) is 21.5dBm at 900MHz
- 8.5GHz transition frequency
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Transistor Polarity
NPN
Transition Frequency
8.5GHz
Continuous Collector Current
200mA
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
12V
Power Dissipation
2W
Transistor Case Style
SOT-223
DC Current Gain hFE Min
60hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000148