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제품 정보
제조업체ONSEMI
제조업체 부품 번호FDMA1028NZ
주문 코드1324789RL
기술 데이터 시트
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id3.7A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.068ohm
Continuous Drain Current Id N Channel3.7A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.068ohm
Rds(on) Test Voltage1V
Drain Source On State Resistance P Channel-
Gate Source Threshold Voltage Max1V
Transistor Case StyleµFET
Power Dissipation Pd1.4W
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
The FDMA1028NZ is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
- Low profile
- Halogen-free
- ±12V Gate to source voltage
- 3.7A Continuous drain current
- 6A Pulsed drain current
애플리케이션
Industrial, Power Management
기술 사양
Channel Type
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
3.7A
On Resistance Rds(on)
0.068ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.068ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
µFET
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
3.7A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
1V
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.4W
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Thailand
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Thailand
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.0005