FDMS86255

FDMS86255 is a N-channel, shielded gate, POWERTRENCH MOSFET. This N-channel MOSFET is produced using onsemi advanced POWERTRENCH process that incorporates shielded Gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance. Typical applications are OringFET / load switching, synchronous rectification, DC-DC conversion.

• Advanced package and silicon combination for low RDS(on) and high efficiency
• Next generation enhanced body diode technology, engineered for soft recovery
• 100% UIL tested
• Drain to source voltage is 150V at TA = 25°C
• Gate to source voltage is ±20V at TA = 25°C
• Drain current is 62A at continuous, TC = 25°C
• Single pulse avalanche energy is 541mJ at TA = 25°C
• Power dissipation is 113W at TC = 25°C
• PQFN8 package
• Operating and storage junction temperature range from -55 to +150°C