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| 포장 유형 | 수량 | 단가: | 총계 |
|---|---|---|---|
| 컷 테이프 | 5 | ₩1,980 | ₩9,900 |
| 총계 가격 | ₩9,900 | ||
| 수량 | 가격 |
|---|---|
| 5+ | ₩1,980 |
| 50+ | ₩1,697 |
| 100+ | ₩1,414 |
| 500+ | ₩1,189 |
| 1000+ | ₩1,166 |
제품 정보
제품 개요
The HGTD1N120BNS9A is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.
- Short-circuit rating
- Avalanche rated
- 2.5V @ IC = 1A Low saturation voltage
- 258ns Fall time @ TJ = 150°C
- 298W Total power dissipation @ TC = 25°C
애플리케이션
Power Management, Motor Drive & Control
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
5.3A
60W
TO-252AA
150°C
-
Lead (25-Jun-2025)
2.5V
1.2kV
3Pins
Surface Mount
MSL 1 - Unlimited
관련 제품
3개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
제품 준수 증명서
