NCP5111DR2G

The NCP5111DR2G is a high voltage Power Gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. It uses the bootstrap technique to ensure a proper drive of the high-side power switch.

• High and low drive outputs
• Up to VCC swing on input pins
• Extended allowable negative bridge pin voltage swing to -10V for signal propagation
• Matched propagation delays between both channels
• 1 input with internal fixed dead time (650ns)
• Under VCC lockout (UVLO) for both channels
• Pin-to-Pin-compatible with industry standards
• Up to 600V high voltage range
• ±50V/ns dV/dt Immunity
• 250/500mA Output source/sink current capability
• 3.3 and 5V Input logic compatible

애플리케이션

Signal Processing