페이지 인쇄
NTZD3155CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 540 mA, 0.4 ohm
이미지는 참고용으로만 제공됩니다. 자세한 내용은 제품 설명을 참조하세요.
제품 정보
제조업체ONSEMI
제조업체 부품 번호NTZD3155CT1G
주문 코드2101817RL
기술 데이터 시트
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id540mA
On Resistance Rds(on)0.4ohm
Continuous Drain Current Id N Channel540mA
Continuous Drain Current Id P Channel540mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.4ohm
Drain Source On State Resistance P Channel0.4ohm
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOT-563
Power Dissipation Pd250mW
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
The NTZD3155CT1G is a N/P-channel complementary Small Signal MOSFET designed for cell phones, MP3s, digital cameras and PDAs. It is suitable for DC-to-DC conversion circuits, load/power switching with level shift, single or dual cell Li-Ion battery operated systems and high speed circuit applications.
- Leading Trench technology for low RDS (ON) performance
- High efficiency system performance
- Low threshold voltage
- ESD protected gate
- Small footprint
애플리케이션
Industrial, Power Management
기술 사양
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.4ohm
Continuous Drain Current Id P Channel
540mA
Drain Source On State Resistance N Channel
0.4ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-563
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
540mA
Continuous Drain Current Id N Channel
540mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.4ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
250mW
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
NTZD3155CT1G의 대체 제품
2개 제품을 찾았습니다.
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000726