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FDC6561AN
Dual MOSFET, N Channel, 30 V, 2.5 A, 0.082 ohm
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제품 정보
제조업체ONSEMI
제조업체 부품 번호FDC6561AN
주문 코드9844813RL
기술 데이터 시트
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id2.5A
Continuous Drain Current Id N Channel2.5A
On Resistance Rds(on)0.082ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.082ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Gate Source Threshold Voltage Max1.8V
Transistor Case StyleSuperSOT
Power Dissipation Pd960mW
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
The FDC6561AN is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
- Low gate charge
- Very fast switching
- Small footprint
- Low profile
애플리케이션
Industrial, Power Management
기술 사양
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
2.5A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.082ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
2.5A
On Resistance Rds(on)
0.082ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
Power Dissipation Pd
960mW
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
FDC6561AN의 대체 제품
1개 제품을 찾았습니다.
관련 제품
2개 제품을 찾았습니다.
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000043