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FDS6875
Dual MOSFET, P Channel, 20 V, 6 A
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제품 정보
제조업체ONSEMI
제조업체 부품 번호FDS6875
주문 코드9844899RL
기술 데이터 시트
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds20V
Continuous Drain Current Id6A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.024ohm
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel6A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.024ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max800mV
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel-
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
제품 개요
The FDS6875 is a dual P-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics like load switching, battery charging and protection circuits applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±8V Gate to source voltage
- -6A Continuous drain current
- -20A Pulsed drain current
애플리케이션
Industrial, Power Management
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.024ohm
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
0.024ohm
Gate Source Threshold Voltage Max
800mV
Power Dissipation Pd
2W
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
관련 제품
3개 제품을 찾았습니다.
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.001134