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FDS89141
Dual MOSFET, N Channel, 100 V, 100 V, 3.5 A, 3.5 A, 0.047 ohm
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제품 정보
제조업체ONSEMI
제조업체 부품 번호FDS89141
주문 코드2083349RL
기술 데이터 시트
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id3.5A
On Resistance Rds(on)0.047ohm
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel3.5A
Drain Source On State Resistance N Channel0.047ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.047ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.1V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd31W
Power Dissipation N Channel31W
Power Dissipation P Channel31W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
제품 개요
The FDS89141 is a dual N-channel shielded gate MOSFET produced using advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for RDS (ON), switching performance and ruggedness. The device is suitable for use with synchronous rectifier and primary switch for bridge topology applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- ±20V Gate to source voltage
- 3.5A Continuous drain current
- 18A Pulsed drain current
애플리케이션
Industrial, Power Management
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
100V
On Resistance Rds(on)
0.047ohm
Continuous Drain Current Id P Channel
3.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
31W
Power Dissipation P Channel
31W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
100V
Continuous Drain Current Id
3.5A
Continuous Drain Current Id N Channel
3.5A
Drain Source On State Resistance N Channel
0.047ohm
Drain Source On State Resistance P Channel
0.047ohm
Gate Source Threshold Voltage Max
3.1V
No. of Pins
8Pins
Power Dissipation N Channel
31W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000272