페이지 인쇄
STB6NK90ZT4
Power MOSFET, N Channel, 900 V, 2.9 A, 1.56 ohm, TO-263 (D2PAK), Surface Mount
이미지는 참고용으로만 제공됩니다. 자세한 내용은 제품 설명을 참조하세요.
제품 정보
제조업체 부품 번호STB6NK90ZT4
주문 코드1752007
기술 데이터 시트
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id2.9A
Drain Source On State Resistance1.56ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
제품 개요
The STB6NK90ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage MOSFETs.
- 100% Avalanche tested
- Extremely high dV/dt capability
- Very low intrinsic capacitance
- Very good manufacturing repeatability
애플리케이션
Industrial, Power Management
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
N Channel
Continuous Drain Current Id
2.9A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
900V
Drain Source On State Resistance
1.56ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:Lead (21-Jan-2025)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.002268