VNS3NV04DPTR-E

VNS3NV04DPTR-E is an automotive OMNIFET II fully auto protected power MOSFET. It is made up of two monolithic chips (OMNIFET II) housed in a standard package. The OMNIFET II is designed using STMicroelectronics VI Power M0-3 technology and is intended for replacement of standard power MOSFET in up to 50kHz DC applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring voltage at the input pin.

• AEC-Q100 qualified, linear current limitation
• Thermal shutdown, short-circuit protection, integrated clamp
• Low current drawn from input pin
• Diagnostic feedback through input pin, ESD protection
• Direct access to the gate of the power MOSFET (analogue driving)
• Compatible with standard Power MOSFET
• Static drain-source on resistance is 120mohm max (VIN = 5V; ID = 1.5A; Tj = 25°C)
• Drain current limit is 5A typ (VIN = 5V; VDS = 13V, -40°C <lt/> Tj <lt/> 150°C)
• Drain-source clamp voltage is 45V typ (VIN = 0V, ID = 1.5A, -40°C <lt/> Tj <lt/> 150°C)
• SO-8 package, operating temperature range from -40°C to 150°C

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.