ADL8104ACPZN

ADL8104 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 0.4GHz to 7.5GHz. It features inputs and outputs that are internally matched to 50 ohm. The RFIN and RFOUT pins are internally ac-coupled and the bias inductor is also integrated, making the device ideal for surface-mounted technology (SMT)-based, high density applications. It is used in application such as test instrumentation, military communications etc.

• Single positive supply (self biased)
• High OIP2 is 52dBm typical at (0.6GHz to 7.5GHz, TA = 25°C)
• High gain is 15dB typical at (0.6GHz to 6GHz, TA = 25°C)
• High OIP3 is 32dBm typical at (VDD = 5V, IDQ = 150mA, TA = 25°C)
• Low noise figure is 3.5dB typical at (0.4GHz to 6GHz)
• Supply current (IDQ) is 150mA typical at (VDD = 5V)
• Operating temperature is -40°C to +85°C
• Package style is 16-lead lead frame chip scale [LFCSP]

메모

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party