ADL8150ACPZN

ADL8150 is a self biased gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6GHz to 14GHz. The amplifier provides 12dB of typical signal gain, 18dBm output power at 1dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 30dBm. The amplifier requires 74mA from a 5V collector supply voltage. It also features inputs and outputs (I/Os) that are internally matched to 50 ohm, and facilitates integration into multichip modules (MCMs). It is used in application such as military and space, test instrumentation, communications etc.

• Phase noise is -172dBc/Hz typ at (10KHz offset)
• PSAT is 22dBm typical at (7GHz to 12GHz)
• Noise figure is 4.8dB typ at (TA = 25°C)
• Input loss is 2dB typical at (TA = 25°C)
• Output loss is 14dB typical at (TA = 25°C)
• Gain variation over temperature is 0.033dB/°C typ at (TA = 25°C)
• Operating temperature is -40°C to +85°C
• Package style is 6-lead lead frame chip scale [LFCSP]

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