ADL9005ACPZN

ADL9005 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband, LNA that operates from 0.01GHz to 26.5GHz. The saturated output power (PSAT) of upto 16dBm enables the LNA to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, inphase/quadrature (I/Q) or image rejection mixers. It also features inputs and outputs (I/Os) that are internally matched to 50 ohm, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications. It is used in application such as test instrumentation, military, communications etc.

• Single positive supply
• Low noise figure is 2.5dB typical at (0.01GHz to 14GHz)
• High gain is 17.5dB typical at (0.01GHz to 14GHz)
• OP1dB is 13.5dBm typical at (0.01GHz to 20GHz)
• High OIP3 is 26dBm typical at (0.01GHz to 14GHz)
• Gain variation over temperature is 0.0077dB/°C typical at (0.01GHz to 14GHz, TA = 25°C)
• Operating temperature is -40°C to +85°C
• Package style is 24-lead LFCSP

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