ADR435TRZ-EP

ADR435-EP is a low noise XFET voltage reference with current sink and source capability. This XFET® voltage reference features low noise, high accuracy and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and eXtra implanted junction FET (XFET) technology, voltage change vs. temperature nonlinearity in the device is minimized. The XFET reference operates at lower current (800μA) and lower supply voltage headroom (2V) than buried zener references. Buried zener references require more than 5V headroom for operation. This reference is optimal low noise solutions for 5V systems. The device has capability to source up to +10mA of output current and sink up to −10mA. It also come with a trim terminal to adjust the output voltage over a 0.5% range without compromising performance. Typical applications include precision data acquisition systems, high resolution data converters, optical control circuits and precision instruments.

• No external capacitor required, high output source and sink current of +10mA and −10mA
• Load regulation of 15ppm/mA maximum an line regulation of 20ppm/V maximum
• Support defence and aerospace applications, aerospace qualified electronic component (AQEC) standard
• Military temperature range from -55°C to +125°C, controlled manufacturing baseline
• One assembly and test site, one fabrication site
• 5V output voltage, ±2.0mV accuracy, 3ppm/°C temperature coefficient maximum
• Voltage noise of 8µV p-p (0.1Hz to 10Hz), voltage noise density of 115nV/√Hz at 1KHz
• Operating supply voltage range from 7V to 18V
• Ripple rejection ratio of −70dB at fIN = 1KHz, turn on settling time of 10µs at CL = 0µF
• 8-lead SOIC-N package

메모

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party