ADRF5132BCPZN

ADRF5132 is a high power, reflective, 0.7GHz to 5GHz, silicon, single-pole, double-throw (SPDT) reflective switch. This switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. It has high power handling of 35dBm LTE (average typical at 105°C), a low insertion loss of 0.6dB at 2.7GHz, input third-order intercept of 65dBm (typical), and 0.1dB compression (P0.1dB) of 42.5dBm. The on-chip circuitry operates at a single, positive supply voltage of 5V and a typical supply current of 1.1mA typical, making the device an ideal alternative to pin diode-based switches. It is used in application such as cellular/4G infrastructure, wireless infrastructure, military and high reliability applications, test equipment, pin diode replacement etc.

• Reflective, 50 ohm design
• High power handling at TCASE = 105°C, long-term (<gt/>10 years operation)
• Peak power is 43dBm maximum at (VDD = 5V, VCTL = 0V or VDD, TA = 25°C)
• CW power is 38dBm maximum at (VDD = 5V, VCTL = 0V or VDD, TA = 25°C)
• LTE power average (8dB PAR) is 35dBm max at (VDD = 5V, VCTL = 0V or VDD, TA = 25°C)
• ESD ratings is HBM: 2KV, class 2, CDM: 1.25KV
• Single positive supply is 5V, positive control, CMOS/TTL compatible
• Supply current is 1.1mA typ at (VDD = 5V, TA = 25°C)
• Operating temperature is -40°C to +105°C
• Package style is 16-lead lead frame chip scale [LFCSP]

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