ADRF5300BCCZN-R7

ADRF5300 is a reflective, SPDT switch manufactured in the silicon process. It is developed for 5G applications ranging from 24GHz to 32GHz. It has a low insertion loss of 1.1dB, a high isolation of 38dB, and an RF input power handling capability of 28dBm average and 36dBm peak. It incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3V (VDD) applied to the VDD pin. The device employs CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls. It is used in applications such as industrial scanner, test instrumentation, cellular infrastructure: 5G millimetre wave, military radios, radars, electronic counter measures (ECMs), microwave radios and very small aperture terminals (VSATs).

• Reflective design
• 0.1dB power compression is 37dBm typical at (VDD = 3.3V)
• Input third-order intercept is 63dBm typical at (VDD = 3.3V)
• Steady state average is 28dBm maximum at (VDD = 3.3V)
• Steady state peak is 36dBm maximum at (VDD = 3.3V)
• Internal negative voltage generator
• RF settling time (0.1dB final RF output) is 70ns typical at (VDD = 3.3V)
• Operating temperature is -40°C to +105°C
• Package style is 20-terminal land grid array [LGA]

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