HMC1086F10

HMC1086F10 is a 25W gallium nitride (GaN) MMIC power amplifier. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. Typical application includes test instrumentation, general communications, radar, and EW/ECM.

• Gain flatness is ±1dB (2 to 4GHz frequency, TA = +25°C, typical)
• Gain variation over temperature is 0.03dB/°C (2 to 4GHz frequency, TA = +25°C, typical)
• Input return loss is 15dB (2 to 4GHz frequency, TA = +25°C, typical)
• Output return loss is 12dB (2 to 4GHz frequency, TA = +25°C, typical)
• Output power for 4dB compression (P4dB) is 41dBm (2 to 4GHz frequency, TA = +25°C, typ)
• Power gain for 4dB compression (P4dB) is 20dB (2 to 4GHz frequency, TA = +25°C, typ)
• Saturated output power (Psat) is 44.5dBm (2 to 4GHz frequency, TA = +25°C, typ)
• Power added efficiency (PAE) is 35% (2 to 4GHz frequency, TA = +25°C, typ)
• Total supply current (Id1 + Id2) is 1100mA (2 to 4GHz frequency, TA = +25°C)
• 10-lead LDCC package, operating temperature range from -40 to 85°C

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