HMC1099PM5E

HMC1099PM5E is a gallium nitride (GaN), broadband power amplifier that delivers 10W (40dBm) with up to 60% power added efficiency (PAE) across an instantaneous bandwidth of 0.01GHz to 1.1GHz, at an input power (PIN) of 27dBm. The gain flatness is between 0.5dB to 2dB typical at small signal levels. The HMC1099PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification. The HMC1099PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP. Multifunction pin names may be referenced by their relevant function only. Application includes extended battery operation for public mobile radios, power amplifier stage for wireless infrastructures, test and measurement equipment, commercial and military radars, general-purpose transmitter amplification.

• Simple and compact external tuning for optimal performance
• Internal prematching
• Frequency range from 0.01 to 0.4GHz (TA = 25°C, VDD = 28V, IDDQ = 100mA)
• Output power is 40dBm (typ, Input power (PIN) = 25dBm, TA = 25°C)
• Supply voltage range from 24 to 30V (PIN = 25dBm, TA = 25°C, VDD = 28V, IDDQ = 100mA)
• Output third-order intercept is 50dBm (typ, POUT per tone = 30dBm)
• Noise figure is 8dB (typ, TA = 25°C, VDD = 28V, IDDQ = 100mA)
• Supply voltage range from 24 to 30V (TA = 25°C, VDD = 28V, IDDQ = 100mA)
• Quiescent current is 100mA (typ, TA = 25°C, VDD = 28V, IDDQ = 100mA)
• 32 lead LFCSP package, operating temperature range from -40°C to +85°C

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