HMC311SC70E

HMC311SC70E is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) gain block MMIC SMT DC to 8GHz amplifier. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Typical application includes cellular / PCS / 3G, WiBro / WiMAX / 4G, fixed wireless & WLAN, CATV & cable modem, microwave radio and test equipment.

• Gain is 15.0dB (typ, DC - 1.0GHz, Vs= 5V, Rbias= 22Ohm, TA = +25°C)
• Gain variation over temperature is 0.004dB/ °C (typ, DC - 1.0GHz, Vs= 5V, Rbias= 22Ohm, TA = +25°C)
• Return loss input / output is 15dB (typ, DC - 8.0GHz, Vs= 5V, Rbias= 22Ohm, TA = +25°C)
• Reverse isolation is 18dB (typ, DC - 8.0GHz, Vs= 5V, Rbias= 22Ohm, TA = +25°C)
• Output power for 1dB compression (P1dB) is 15.5dBm (typ, DC - 2.0GHz, TA = +25°C)
• Output third order intercept (IP3) is 30dBm (typ, DC - 2.0GHz, Vs= 5V, Rbias= 22Ohm, TA = +25°C)
• Noise figure is 5dB (typ, DC - 8.0GHz, Vs= 5V, Rbias= 22Ohm, TA = +25°C)
• Supply current (Icq) is 55mA (typ, Vs= 5V, Rbias= 22Ohm, TA = +25°C)
• SC70 package, operating temperature range from -40 to +85°C

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