HMC327MS8GE

HMC327MS8GE is a high efficiency GaAs InGaP heterojunction bipolar transistor (HBT) MMIC power amplifier which operates between 3GHz and 4GHz. With a minimum of external components, this amplifier provides 21dB of gain, +30dBm of saturated power at 45% PAE from a single +5V supply. Power down capability is available to conserve current consumption when the amplifier is not in use. It is widely used in applications such as wireless local loop, WiMAX & fixed wireless, access points, subscriber equipment etc.

• Power down capability
• Low external part count
• Gain variation over temperature is 0.025dB / °C typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Input return loss is 15dB typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Output return loss is 8dB typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Output power for 1dB compression is 27dBm typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Saturated output power is 30dBm typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Output third order intercept is 40dBm typ at (TA = +25°C, Vs = 5V, Vctl = 5V)
• Noise figure is 5dB typ at (TA = +25°C), switching speed is 40ns typ at (TA = +25°C)
• Operating temperature is -40°C to +85°C, package style is MSOP

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