HMC637ALP5E

HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1GHz and 6GHz. This is making the HMC637ALP5E ideal for electronic warfare (EW), electronic counter-measure (ECM), radar and test equipment applications. Application includes telecom infrastructure, microwave radio, very small aperture terminal (VSAT), military and space, test instrumentation, fibre optics.

• Output power for 1dB compression is 29dBm (typ, TA = 25°C, (VDD) = 12V, IDD = 400mA)
• Frequency range from 0.1 to 6GHz (TA = 25°C, (VDD) = 12V, IDD = 400mA)
• Gain flatness is 13dB (typ, TA = 25°C, (VDD) = 12V, IDD = 400mA)
• Gain variation over temperature is 0.015dB/°C (typ, TA = 25°C, (VDD) = 12V, IDD = 400mA)
• Input return loss is 12dB (typ, TA = 25°C, (VDD) = 12V, IDD = 400mA)
• Output return loss is 15dB (typ, TA = 25°C, (VDD) = 12V, IDD = 400mA)
• Output power for 1dB compression is 29dBm (typ, TA = 25°C, (VDD) = 12V, IDD = 400mA)
• Saturated output power is 31dBm (typ, TA = 25°C, (VDD) = 12V, IDD = 400mA)
• Noise figure is 5dB (typ, 2.0GHz to 6.0GHz, TA = 25°C)
• 32 lead LFCSP package, operating temperature range from -40°C to +85°C

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