HMC659LC5

HMC659LC5 is a GaAs MMIC pHEMT distributed power amplifier. This amplifier I/Os are internally matched to 50 Ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques. Typical application includes telecom infrastructure, microwave radio and VSAT, military and space, test instrumentation, fibre optics.

• Frequency range from 6 to 11GHz (typ, TA = +25°C, Vdd= +8V, Vgg2= +3V)
• Gain is 18dB (typ, TA = +25°C, Vdd= +8V, Vgg2= +3V, 6 to 11GHz)
• Gain variation over temperature is 0.019dB/ °C (typ, TA = +25°C, Vdd= +8V, Vgg2= +3V, 6 to 11GHz)
• Input return loss is 18dB (typ, TA = +25°C, Vdd= +8V, Vgg2= +3V, 6 to 11GHz)
• Output return loss is 20dB (typ, TA = +25°C, Vdd= +8V, Vgg2= +3V, 6 to 11GHz)
• Output power for 1dB compression is 27.5dBm (typ, TA = +25°C, Vdd= +8V, Vgg2= +3V, 6 to 11GHz)
• Noise figure is 2.5dB (typ, TA = +25°C, Vdd= +8V, Vgg2= +3V, 6 to 11GHz)
• Supply current (Idd) (Vdd= 8V, Vgg1= -0.8V typ.) is 300mA (typ, TA = +25°C)
• 32 lead LFCSP-EP package, operating temperature range from -40 to +85°C

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