HMC8413LP2FE

HMC8413 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01GHz to 9GHz. The HMC8413 also features inputs and outputs that are internally matched to 50 ohm, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications. Typical application includes test instrumentation, military communications, military radar, telecommunications.

• Noise figure is 1.9dB (typ, VDD = 5V, IDQ = 95mA, TA = 25°C)
• Frequency range from 0.01 to 7GHz (VDD = 5V, IDQ = 95mA, TA = 25°C)
• Gain is 19.5dB (typ, VDD = 5V, IDQ = 95mA, TA = 25°C)
• Gain variation over temperature is 0.013dB/°C (typ, VDD = 5V, IDQ = 95mA, TA = 25°C)
• Input return loss is 15dB (typ, VDD = 5V, IDQ = 95mA, TA = 25°C)
• Output return loss is 18dB (typ, VDD = 5V, IDQ = 95mA, TA = 25°C)
• Output power for 1dB compression is 21.5dBm (typ, VDD = 5V, IDQ = 95mA, TA = 25°C)
• Output second-order intercept is 39dBm (typ, measurement taken at POUT per tone = 5dBm)
• Power added efficiency is 37% (typ, measured at PSAT)
• 6 lead LFCSP package, operating temperature range from -40°C to +85°C

메모

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party