제품 정보
제품 개요
The IR2113STRPBF is a high voltage high speed power MOSFET and IGBT high and low-side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
애플리케이션
Sensing & Instrumentation, Motor Drive & Control, Medical, Automation & Process Control
기술 사양
2Channels
High Side and Low Side
16Pins
Surface Mount
2A
10V
-40°C
120ns
-
MSL 3 - 168 hours
-
IGBT, MOSFET
SOIC
Non-Inverting
2A
20V
125°C
94ns
-
No SVHC (21-Jan-2025)
IR2113STRPBF의 대체 제품
1개 제품을 찾았습니다.
관련 제품
2개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:United States
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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