입고 시 알림 요청
수량 | 가격 |
---|---|
1+ | ₩3,456 |
10+ | ₩3,152 |
25+ | ₩3,012 |
50+ | ₩2,871 |
100+ | ₩2,730 |
250+ | ₩2,701 |
500+ | ₩2,687 |
1000+ | ₩2,469 |
제품 정보
제품 개요
The FM25C160B-G is a 16kbit Non-volatile Memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system level reliability problems caused by serial flash, EEPROM and other non-volatile memories. Unlike serial flash and EEPROM, this memory performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition the product offers substantial write endurance compared with other non-volatile memories.
- No write delays are incurred
- Very fast serial peripheral interface
- Direct hardware replacement for serial flash and EEPROM
- Sophisticated write protection scheme
- -40 to 85°C Industrial temperature range
애플리케이션
Computers & Computer Peripherals
기술 사양
FRAM
2K x 8bit
-
8Pins
5.5V
85°C
MSL 3 - 168 hours
16Kbit
SPI
SOIC
4.5V
-40°C
-
No SVHC (21-Jan-2025)
기술 문서 (1)
FM25C160B-G의 대체 제품
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관련 제품
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법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:United States
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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