DMN63D8LW-13

DMN63D8LW-13 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include motor controls, power-management functions, and backlighting.

• Low on-resistance, low input capacitance, ESD protected up to 1kV
• Fast switching speed, low input/output leakage
• Drain-source voltage is 30V at TA = +25°C
• Gate-source voltage is ±20V at TA = +25°C
• Continuous drain current is 380mA at TA = +25°C, VGS = 10V, steady state
• Pulsed drain current (10µs pulse, duty cycle = 1%) is 1.2A at TA = +25°C
• Total power dissipation is 300mW at TA = +25°C
• Static drain-source on-resistance is 2.8ohm max at VGS = 10.0V, ID = 250mA, TA = +25°C
• SOT323 case
• Operating and storage temperature range from -55 to +150°C

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