BFQ790H6327XTSA1

BFQ790H6327XTSA1 is a high linearity RF medium power transistor. It is a single stage high linearity and high gain driver amplifier based on NPN silicon germanium technology. Potential applications includes commercial and industrial wireless infrastructure, ISM band medium power amplifiers and drivers, automated test equipment, UHF television, CATV and DBS. Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

• Collector emitter voltage is 6.1V (max, TA = 25°C)
• Instantaneous total base emitter reverse voltage is -2V (min, DC + RF swing, TA = 25°C)
• DC collector current is 300mA (typ, TA = 25°C)
• Mismatch at output is 10:1 (typ, in compression, over all phase angles, TA = 25°C)
• Dissipated power is 1500mW (typ, TA = 25°C)
• Collector emitter leakage current is 1nA (typ, VCE = 8V, VBE = 0V, TA = 25°C)
• DC current gain is 120 (typ, TA = 25°C)
• RF input power is 18dBm (typ, in- and output matched, TA = 25°C)
• Maximum power gain is 23dB (typ, IC = 250mA, VCE = 5V, f = 0.9GHz)
• SOT89 package, operating case temperature range from -55 to 150°C

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