BSC030N08NS5ATMA1

BSC030N08NS5ATMA1 is an OptiMOS™5 power transistor MOSFET.

• Optimized for high performance SMPS, 100% avalanche tested
• Superior hermal resistance, N-channel
• Qualified according to JEDEC for target applications
• Drain-source breakdown voltage is 80V min (VGS=0V, ID=1mA, Tj=25°C)
• Drain-source on-state resistance is 3mohm max (VGS=10V, ID=50A, Tj=25°C)
• Continuous drain current is 161A max (VGS=10V, TC=25°C)
• Output charge is 73nC typ (VDD=40V, VGS=0V, TC=25°C)
• Gate charge total is 61nC typ (VDD=40V, ID=50A, VGS=0 to 10V, TC=25°C)
• Power dissipation is 139W max (TC=25°C)
• PG-TDSON-8 package, operating temperature range from -55 to 150°C

경고

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.