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| 수량 | 가격 |
|---|---|
| 1+ | ₩11,110 |
| 10+ | ₩10,337 |
| 25+ | ₩10,039 |
| 50+ | ₩9,801 |
| 100+ | ₩9,565 |
| 250+ | ₩9,250 |
| 500+ | ₩9,014 |
제품 정보
제품 개요
CY7C1041G-10VXIT is a high-performance CMOS fast static RAM device with embedded ECC. This offers in single chip-enable option and in multiple pin configurations. Data writes are performed by asserting the chip enable active-low (CE) and write enable active-low (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The byte high enable active-low (BHE) and byte low enable active-low (BLE) inputs control write operations to the upper and lower bytes of the specified memory location. Active-low BHE controls I/O8 through I/O15 and active-low BLE controls I/O0 through I/O7.
- High speed tAA = 10ns, 4.5V–5.5V voltage range, 4Mbit density
- 44-pin SOJ (400 Mils) package
- Active current: ICC = 38mA typical, standby current: ISB2 = 6mA typical
- 1.0-V data retention, TTL-compatible inputs and outputs
- Industrial operating temperature rating range from –40°C to +85°C
기술 사양
Asynchronous SRAM
256Kword x 16bit
4.5V to 5.5V
SOJ
44Pins
10ns
5V
Surface Mount
85°C
-
4Mbit
4Mbit
256Kword x 16bit
SOJ
4.5V
5.5V
-
-40°C
-
No SVHC (25-Jun-2025)
기술 문서 (1)
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
제품 준수 증명서
